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Home About Novusem Company Profile
Company Profile

Founded in 2019, Novus Semiconductors Co., Ltd. is the first high-tech enterprise in Sichuan Province devoted to the design and development of wide-bandgap semiconductor silicon carbide (SiC) power devices.

Novusem has built an international team of experts with deep knowledge of the core technologies of SiC MOSFETs. Our supply chain consists of advanced SiC manufacturing platforms in Taiwan (China) and Europe with the packaging, testing, and application solutions in the Chinese mainland.  Our substrate material, epitaxy, wafer manufacturing, packaging, and testing all conform to IATF-16949 standards. Based on this foundation, we have developed world-class automotive-grade SiC devices.

Novusem’s silicon carbide product lines are divided into the cost-effective "NovuSiC®" series and the highly-reliable "DuraSiC®" series. Within each line, we have SiC EJBS™ (Enhanced Junction Barrier Schottky) diodes and SiC MOSFETs. We also offer silicon-based products, which include MCR® (MOS-Controlled Rectifier) and FR MOS (Fast Recovery MOSFET). Both with an operating junction temperature of up to 150°C. These products are widely used in automotive electronics, EV charging, PV inverters, energy storage and motor drives.

23
Intellectual
Property
18
Invention
5
Utility Model Patents
3
PCT
Development History
2023.02
SiC MOSFET(G1) Mass Production
Mass Production of SiC MOSFET G1 (1200V/40mΩ)
2023.02
2023.01
Long-term strategic partnership with Episil
Episil Technology prioritized Novusem OEM products as Tier 1
2023.01
2022.11
High-tech Enterprise Certification
Novusem was certified as a high-tech enterprise in 2022
2022.11
2022.09
Online new product launch event end successfully
NovuSiC® MOSFET G1 is released officially
2022.09
2022.08
Completion of Pre-A Round Financing
Please follow the online new product launch event on September 27
2022.08
2022.06
"Power for the Future" Launch Event
Launched the independently developed NovuSiC® EJBS™ and ideal silicon-based MCR® diode series products
2022.06
2022.01
SiC Diode (G1) Mass Production
Mass production status of EJBS™ diode (1200 V/20 A)
2022.01
2021.12
3M RMB order
Si-based MCR® order amount of over 3M RMB
2021.12
2021.10
SiC MOSFET (G1) Mass Production
Mass production status of SiC MOSFET (G1) (1200 V/75 mΩ)
2021.10
2021.05
Successful SiC MOSFET (G1) Development
First tape-out success of SiC MOSFET (1200 V/75 mΩ), which yielded 91.2%
2021.05
2021.03
Angel Financing Raised
Optimized MCR technology and mass production of SiC products
2021.03
2021.01
Commercialized Si-based MCR Research
Patented Si-based diode with breakthrough technology
2021.01
2020.11
Successful SiC EJBS Development
First tape-out success of EJBS™ SiC diodes (1200 V/20 A), which yielded 97%
2020.11
2019.12
Novusem was established
in Chengdu High-tech Zone’s Foreign-funded Silicon Power Technology (SPT) Power Semiconductor Incubator
2019.12
Quality Management System

Novusem has established an IATF16949-certificated supply chain system subject to strict control, covering design, wafer manufacturing, packaging and testing.

Novusem has pioneered the use of cutting-edge WLTBI(Wafer-Level Test & Burn-in) testing system in China, ensuring delivery of SiC wafers of the quality and reliability up to the highest standard in the industry.

Novusem strictly applies the AEC-Q101 standard to all its products and creatively proposes an AEC-Q101+ standard called NovuSuperior within the Company.