Founded in 2019, Novus Semiconductors Co., Ltd. is the first high-tech enterprise in Sichuan Province devoted to the design and development of wide-bandgap semiconductor silicon carbide (SiC) power devices.
We has built an international team of experts with deep knowledge of the core technologies of SiC MOSFETs. Our supply chain consists of advanced SiC manufacturing platforms in Taiwan and Europe with the packaging, testing, and application solutions in the Chinese mainland. Our substrate material, epitaxy, wafer manufacturing, packaging, and testing all conform to IATF-16949 standards. Based on this foundation, we have developed world-class automotive-grade SiC devices.
Our silicon carbide product lines are divided into the cost-effective "NovuSiC®" series and the highly reliable "DuraSiC®" series. Within each line we have SiC EJBS™ (Enhanced Junction Barrier Schottky) diodes and SiC MOSFETs. We also offer silicon-based products, which include MCR® (MOS-Controlled Rectifier) and FR MOS (Fast Recovery MOSFET). Both with an operating temperature of up to 175°C. These products are widely used in automotive electronics, EV charging, PV inverters, energy storage and motor drives.