NovuSiC® MOSFET Officially Released

2023-03-27

On September 27, Novusem rolled out the first generation of NovuSiC® MOSFET (G1) and announced the mass production schedule of the second generation (G2).

"Power for the Future"- Novusem's SiC New Product Launch Event end successfully

2022-07-04

On June 30, Novusem held a product launch themed "Power for the Future" with an offline launch event + synchronous live streaming to debut its independently developed NovuSiC® EJBS™ and the Silicon-based MCR® diode series.

Novusem’s Pre-A round of financing complete successfully NovuSiC MOSFET will be unveiled at the end

2022-08-18

In August 2022, Novusem—the first high-tech enterprise in Sichuan Province focusing on the design and development of wide-bandgap semiconductor silicon carbide power devices, completed Pre-A round of financing.

UESTC establishes an engineering practice education base at Novusem

2023-03-27

On March 10, the School of Integrated Circuit Science and Engineering of UESTC and Novusem signed the Talent Strategic Cooperation Agreement.

Forward inrush current of over 12 times the rated current！A breakthrough in local automotive-grade S

2022-10-18

Novusem has recently announced a technological breakthrough. The mass-produced enhanced SiC JBS has a forward inrush current of over 12 times the rated current.

MCR^®Wafer

2021-12-10

An ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature.

DuraSiC^® EJBS™

2021-12-10

DuraSiC^®️ series is proven in accordance with NovuStandard (AEC-Q101+) and has passed WLTBI (Wafer-Level Test & Burn-In), ensuring no potential oxide layer defects.

NovuSiC^® EJBS™

2021-10-18

NovuSiC^® is cost-effective, quality-oriented, and is proven in accordance with AEC-Q101

2021-12-10