An ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature.

An ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature.

NovuSiC^® is cost-effective, quality-oriented, and is proven in accordance with NovuStandard (industrial standards).

DuraSiC^®️ series is proven in accordance with NovuSuperior (AEC-Q101+) and has passed WLTBI (Wafer-Level Test & Burn-In), ensuring no potential oxide layer defects.