SiC JBS (Junction Barrier Schottky Diode) is a composite structure of a PiN Diode and SBD structure. The PiN structure, in the reverse blocking state of the device, is used to shield the electric filed of the Schottky region to reduce leakage current. The SBD structure realizes the low forward voltage through unipolar conduction.
Novusem has developed a SiC JBS (Junction Barrier Schottky), through the optimization of device structure and manufacturing process, called “EJBS™” (Enhanced Junction Barrier Schottky Diode).The EJBS™ features ultra-low leakage current (2μA) and high surge current capability comparable to that of the MPS (Merged PiN Schottky) structure.
⬤ High surge current capability
⬤ Low leakage current
⬤ Low forward voltage
⬤ No reverse recovery current
⬤ 175°C operating junction temperature
(1) 1100 V PV System Boost PFC: In the application of 11kW PV inverters, compared with FRD, NovuSiC® EJBS™ reduces system loss by 30%, and reduces temperature increases in silicon-based IGBTs and SiC diodes by 6°C and 13°C respectively, greatly improving overall power density.
(2) Vienna rectifier for 20 kW charging piles: NovuSiC® EJBS™ improves system efficiency by 1.05% while reducing switching loss by 91% and total loss by 50% compared to FRD