Novusem’s silicon carbide product lines are divided into the cost-effective "NovuSiC^®" series and the highly-reliable "DuraSiC^®" series. 

SiC EJBS™ (Enhanced Junction Barrier Schottky) features ultra-low leakage current (2μA) and high surge current capability comparable to that of the MPS (Merged PiN Schottky) structure.

MCR^® (MOS-Controlled Rectifier) is an ideal silicon-based diode built for high breakdown voltage, low leakage current, low forward voltage, and high operational junction temperature. 

The cost-effective NovuSiC^® and highly reliable DuraSiC^®️ MOSFET series products drastically lower both static and dynamic losses. In higher frequency applications, our products can shrink system components which can increase the overall power density and reduce the total system cost.

FR MOSFET (Fast Recovery MOSFET) is a power MOS device with fast reverse recovery characteristics that utilizes minority carrier lifetime control technology to optimize body diode performance.