Recently, Novus Semiconductors Co., Ltd. (Novusem) signed a long-term strategic cooperation agreement with Episil Technologies Inc. (Episil), further deepening the cooperation between the two parties in silicon carbide (SiC) manufacturing.
In accordance with the Agreement, Episil will provide Novusem with access to its SiC process platform, giving top priority to Novusem's OEM products. This greatly bolsters Novusem's supply chain assurance and enables faster growth of SiC power semiconductor devices, thus satisfying the expanding market need and bringing greater value to customers.
Episil was established in 1985 in Hsinchu Science Park. It was the world's first Linear Bipolar IC professional foundry, as well as a professional to provide foundry services for compound semiconductor devices (GaN and SiC). At present, Episil has one 4/5-inch and two 6-inch wafer fabs, with a monthly production capacity of 1,000 pcs for 4-inch wafers, 8,000 pcs for 5-inch wafers, 17,000 pcs and 33,000 pcs for 6-inch wafers, respectively. With a yield rate of over 95% for Schottky barrier diodes (SBD) or planar junction barrier Schottky (JBS) diodes, its SiC products are highly competitive.
Established in 2019, Novusem is the first high-tech enterprise in Sichuan Province dedicated to the design and development of SiC power devices. Novusem has established a complete supply chain that meets the IATF 16949 quality management standard in substrate materials, epitaxy, wafer manufacturing, packaging, and testing. The company has rolled out the cost-effective "NovuSiC®" series and the highly-reliable "DuraSiC®" series, covering SiC EJBS™ (Enhanced Junction Barrier Schottky) diodes and SiC MOSFETs. The company also offers silicon-based products, including FR MOS (Fast Recovery MOSFET) and MCR® (MOS-Controlled Rectifier), which has an operating junction temperature of up to 150°C. These products are widely used in PV inverters, energy storage, EV charging, on-board chargers (OBCs), and automotive electronics.